EEL 3396 - Solid State Devices

 

Catalog Description: (3 cr) Introduction to the principles of semiconductor electron device operation.

Prerequisites: Circuits I

Textbook: Solid State Electronic Devices by Streetman and Banerjee, sixth edition, Prentice Hall, 2006

Course Objective: To provide the background on material physics of semiconductors, develop the fundamental semiconductor equations at equilibrium and nonequilibrium, and to apply these fundamental concepts to basic semiconductor devices in order to explain the device operation, electrical characteristics and SPICE model, and design semiconductor devices with specified operating parameters.

Professional Component: 3 credits of Engineering Science

Relationship to Outcomes: (To view how the outcomes of this course fit in with the curriculum, click here)

• EE1 - knowledge of probability and statistics, including applications: Fermi-Dirac, Boltzmann statistics with applications in terms of band occupancy are covered and tested.
• EE2 - knowledge of mathematics, basic and engineering sciences necessary to analyze and design complex systems
• a - an ability to apply knowledge of mathematics, science, and engineering
• c - an ability to design a system, component, or process to meet desired needs within realistic constraints such as economic, environmental, social, political, ethical, health and safety, manufacturability, and sustainability: Differential equations and solid state physics are used to design semiconductor devices meeting certain specifications
• e - an ability to identify, formulate, and solve engineering problems
• k - an ability to use the techniques, skills, and modern engineering tools necessary for engineering practice

Class Schedule: 3 classes per week of 50 minutes each

Topics:

• Semiconductor Materials; Crystal lattices and periodic structures, Wave motion of electrons in materials, Fermi energy level
• Carrier Transport; Drift and electron and hole mobilities, Diffusion in a concentration gradient, Generation, recombination, trapping, and tunneling
• MOS Capacitor; Characteristics of metal-oxide-semiconductor capacitor, Charge control model
• PN Junctions; Energy band diagram, Physics of the Shockley diode equation, Space-charge-layer current, Small-signal characteristics
• Characteristics MOS field-effect transistor, Conductivity modulation model, Small-signal equivalent circuit model, Switching memory devices
• Characteristics of bipolar junction transistor, Derivation of the Shockley equations, Small-signal characteristics, Switching properties
• Characteristics of photonic devices

Course Committee:  Dr. Bosman, Chair, Dr. Zory, Dr. Guo, Dr. Fossum

Course Committee Reports for:

Fall Term		Spring Term		Summer Term
2005		2006