MARK E. LAW
Professor and College of Engineering Associate Dean of Academic Affairs

 

Education:

PhD, EE, Stanford University, 1988
MS, EE, Stanford University, 1982
BS, CprE, Iowa State University, 1981

Contact Information:

Email: law@tec.ufl.edu
Phone: 352-392-0912
Office: 216 Larsen Hall
Homepage: www.tec.ufl.edu/~law

Program Affiliation:

Area:  Devices, Electronics
Lab:   Software and Analysis of Advanced Material Processing Center

Fields of Interest:

• Design and modeling of IC fabrication process
• Computer modeling of semiconductor process and device behavior
• Numerical solution of partial differential equations

Employment:

2009 - Associate Dean for Academic Affairs, College of Engineering, University of Florida
2003 - Professor and Department Chair, Electrical & Computer Engineering, University of Florida
1997 - Professor, Electrical & Computer Engineering, University of Florida
1993 - Associate Professor, Electrical & Computer Engineering, University of Florida
1988 - Assistant Professor, Electrical & Computer Engineering, University of Florida

Refereed Journals in the Last 3 Years:

2009
N.G. Rudawski, K.S. Jones, S. Morarka, M.E. Law, and R.G. Elliman, “Stressed Multidirectional Solid-Phase Epitaxial Growth of Si,” Journal of Applied Physics, 105, 2009, p. 081101.1-20. S. Morarka, N. G. Rudawski, M. E. Law, K. S. Jones, and R. G. Elliman, “Modeling two-dimensional solid-phase epitaxial regrowth using level set methods,” Journal of Applied Physics, 105, 2009, p. 053701.1-5.

2008
I.G. Batyrev, D. Hughart, R. Durand, M. Bounasser, B.R. Tuttle, D.M. Fleetwood, R.D. Schrimpf, S.N. Rashkeev, G.W. Dunham, M. Law, S.T. Pantelides, “Effects of Hydrogen on the Radiation Response of Bipolar Transistors: Experiment and Modeling,” IEEE Transactions on Nuclear Science, 55(6), December, 2008, pp. 3039-45.

Morarka, S., N.G. Rudawski, and M.E. Law, “Level set modeling of the orientation dependence of solid phase epitaxial regrowth”, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 26(1), January, 2008, pp. 357–361.

2007
R.T. Crosby,  K.S. Jones, M.E. Law, L. Radic, P.E. Thompson, and J. Liu, “Interaction of ion-implantation-induced interstitials in B-doped SiGe,” Materials Science in Semiconductor Processing, 10(1), February 2007, Pages 1-5.

Contracts and Grants:

• Semiconductor Research Corp., " Contact Formation and Transport Models "
• AFOSR, "MURI on Device Reliability"

Honors and Awards:

2007 - Professional Achievement Citation in Engineering, Iowa State University
2006 - Semiconductor Research Corporation Aristotle Award
2004 - Semiconductor Research Corporation Faculty Recognition Award for Student Recruiting
1998 - IEEE Fellow
1997 - UF Research Foundation Faculty Award
1996 - College of Engineering Teacher of the Year
1995 - UF Teaching Improvement Program (TIP) Award
1994 - Outstanding Young Alumnus of Iowa State University
1994 - Iowa State University, College of Engineering, Professional Progress Award
1993 - Semiconductor Research Corporation Teaching Excellence Award
1992 - National Science Foundation Presidential Faculty Fellow
1988 - IBM Young Faculty Deveopment Award

Software Copyrights

"SUPREM-IV" with Stanford University, 1991
"FLOOPS" and "FLOODS", 1996