ANT URAL
Assistant Professor

 

Education:

PhD, EE, Stanford University, 2001
MS, EE, Stanford Universtiy, 1997
BSE, EE, Princeton University, 1995

Contact Information:

Email: antural@ece.ufl.edu
Phone: 352-392-9753
Office: 555 New Engineering Building

Program Affiliation:

Area:  Devices
Lab:   www.nano.ece.ufl.edu

Fields of Interest:

• Nanoscience and nanotechnology
• Carbon nanotubes
• Semiconductor nanowires

Employment:

2003 - Assistant Professor, Electrical & Computer Engineering, University of Florida

Refereed Journals in the Last 3 Years:

2009
J. Hicks, A. Behnam, and Ant Ural, “Resistivity in percolation networks of one dimensional elements with a length distribution,” Physical Review E 79, 012102 (2009).

Y. Choi, J. L. Johnson, and Ant Ural, “Patterned growth of silicon oxide nanowires from iron ion implanted SiO2 substrates,” Nanotechnology 20, 135307 (2009).

J. S. Wright, W. Lim, B. P. Gila, S. J. Pearton, J. L. Johnson, Ant Ural, and F. Ren, “Hydrogen sensing with Pt-functionalized GaN nanowires,” Sensors and Actuators B: Chemical 140, 196 (2009).

J. L. Johnson, Y. Choi, Ant Ural, W. Lim, J. S. Wright, B. P. Gila, F. Ren, and S. J. Pearton, “Growth and characterization of GaN nanowires for hydrogen sensors,” Journal of Electronic Materials 38, 490 (2009).

2008
A. Behnam, J. L. Johnson, Y. Choi, M. G. Ertosun, A. K. Okyay, P. Kapur, K. C. Saraswat, and Ant Ural, “Experimental characterization of single-walled carbon nanotube film-Si Schottky contacts using metal-semiconductor-metal structures,” Applied Physics Letters 92, 243116 (2008).

W. Lim, J. S. Wright, B. P. Gila, J. L. Johnson, Ant Ural, T. Anderson, F. Ren, and S. J. Pearton, “Room temperature hydrogen detection using Pd-coated GaN nanowires,” Applied Physics Letters 93, 072109 (2008).

A. Behnam, J. Johnson, Y. Choi, L. Noriega, M. G. Ertosun, Z. Wu, A. G. Rinzler, P. Kapur, K. C. Saraswat, and Ant Ural, “Metal-semiconductor-metal photodetectors based on single-walled carbon nanotube film–GaAs Schottky contacts,” Journal of Applied Physics 103, 114315 (2008).

J. L. Johnson, Y. Choi, and Ant Ural, “GaN nanowire and Ga2O3 nanowire and nanoribbon growth from ion implanted iron catalyst,” Journal of Vacuum Science and Technology B 26, 1841 (2008).

A. Behnam, Y. Choi, L. Noriega, Z. Wu, I. Kravchenko, A. G. Rinzler, and Ant Ural, “Nanolithographic patterning onanotube films,” Physical Review B 78, 085431 (2008).

2007
A. Behnam, Jing Guo, and Ant Ural, “Effects of nanotube alignment and measurement direction on percolation resistivity in single-walled carbon nanotube films,” Journal of Applied Physics 102, 044313 (2007).

A. Behnam and Ant Ural, “Computational study of geometry-dependent resistivity scaling in singlewalled carbon nanotube films,” Physical Review B 75, 125432 (2007).

Honors and Awards

2006 - Junior Faculty Development Award, Southeastern Center for Electrical Engineering Education

Patents:

• US patent application and Stanford University Docket #03-293, "Low temperature growth of single-walled carbon nanotubes with PECVD" with Hongjie Dai, Steven Hung, and James Gibbons
• US patent application, "Room temperature singled-walled carbon nanotube integrated on CMOS”, Figueiredo et al.