The research undertaken at the Florida Solid-State Electronics Laboratory focuses on the application of semiconductor material and device physics for delineating the fundamental limits of future submicron silicon metal-oxide-semiconductor and bipolar-junction transistors (MOSTs and BJTs) for multi-million-transistor digital and analog integrated circuits. Projects supported by industry include developing accelerated methodology to predict in less than 100 hours, the 10 year operation time-to-failure of deep-submicron Si MOSTs, Si BJTs and GeSi BJTs. Additional projects concern the effect of hydrogen on transistor characteristics, compact computer-aided-design transistor model development, and semiconductor physical-chemical-biological sensors. Graduate and undergraduate participants receive hands-on direction by the two senior faculty members with more than 60 years of fundamental and manufacturing research experiences.

The lab has six high performance computer-controlled stress and measure experimental wafer-probe stations with microvolt and 0.1 picoampere sensitivity; several HP4145 and HP4156 D.C. Parameter Analyzers and programmable power supplies for testing 4-8 inch deep-submicron silicon wafers, controlled via IEEE-488 bus by two laboratory MicroVAX-2 computers; 20 office VAX-ALPHA workstations; kilo-electron-volt irradiation system for radiation damage in transistors for space applications; optical bench, infrared, visible, and vacuum ultraviolet computer-controlled monochromators. Spectrometers, Laser sources, and Photon detectors.

Faculty involved in this lab are Dr. Rizwan Bashirullah, Dr. William Eissenstadt, Dr. Robert Fox, Dr. Jenshan Lin