CHIH-TANG SAH
Pittman Eminent Scholar

 

Education:

PhD, EE Stanford University, 1956
MS, EE. Stanford University, 1954
BS, EE, University of Illinois-Urbana, 1953
BS, Physics, university of Illinois-Urbana 1953

Contact Information:

Email: tctsah@ufl.edu
Phone: 352-392-8914
Office: 335 Benton Hall

Program Affiliation:

Area:  Devices
Lab:   Florida Solid State Electronics Lab

Fields of Interest:

• Semiconductor electronics
• Semiconductor device reliability
• Solid state physics

Employment:

1998 - Pittman Eminent Scholar, Electrical & Computer Engineering, University of Florida

Refereed Journals in the Last 3 Years:

2006
Bin B. Jie and Chih-Tang Sah, "Accuracy of surface-potential-bsed long-wide-channel MOS transistor compact models," Technical Proceedings of NSTI, vol. 3, pp. 662-668, May 2006.

Zuhui Chen, Bin B. Jie and Chih-Tang Sah, "Theoretical accuracy of using Boltzmann and ionized impurity approximations in the analyses of recombination current at interface traps in metal-oxide-silicon structures," J. Applied Physics 99, 024502-1 to 024502-10, 15 January 2006

2005
Bin B. Jie and Chih-Tang Sah, "Tunnel DCIV extraction of dopant-impurity concentration, oxide thickness, and length in the channel and extension regions of ultrathin gate oxide MOS transistors," IEEE Transaction on Electron Devices, 52(7), pp.1548-1554, July 2005.

Bin B. Jie and Chih-Tang Sah, "Evaluation of surface-potential-based bulk-charge compact MOS transistor model," IEEE Transactions on Electron devices, 52(8), pp.1787-1794, August 2005.

2004
Chih-Tang Sah, "A history of MOS transistor Compact Modeling," Technical Proceedings of NSTI, Vol.4, p.1 and pp.347-390, May 2005

Bin B. Jie and Chih-Tang Sah, "Physics-based exact analytical drain current equation and optimized compact model for long channel MOS transistors," Proceedings ICSICT, Vol.2, pp.941-946, October 2004.

Bin B. Jie and Chih-Tang Sah, "TDCIV extraction of dopant-impurity concentration and oxide thickness in ultrathin gate oxide MOS transistor," Proceedings ICSICE, Vol.2, pp.1208-1211, October 2004.

Honors and Awards:

2004 - Honorary Doctorate, National Chao-Tung University
2003 - Distinguished Lifetime Achievvement Award, Chinese Institute of Engineers USA
2002 - Committee-100 Pioneer Recognition Award
2000 - Elected to the Chinese Academy of Sciences
1999 - Academician, Academia Sinica of China in Taiwan
1999 - Semiconductor Industry Association University Research Award
1998 - University Research Award, U S Semiconductor Industry Association
1995 - Fellow, American Association of Advanced of Science
1995 - IEEE Life Fellow
1994 - Alumni Achievement Award, University of Illinois
1989 - IEEE Jack Morton Award
1986 - Elected to U. S. National Academy of Engineering
1981 - J. J. Ebers Award, IEEE Electron Device Society
1975 - Doctoris Honoris Causa, K. U. Leuven
1971 - Fellow, American Physical Society
1969 - Fellow, Intitute of Electrical & Electronic Engineers
1000 World's Most Cited Scientists, 1865-1978, Institute of Scientific Information

Patents:

• 3,204,160 - Surface Potential Controlled Semiconductor Device, August 1965
• 3,280,391 - High Frequency Transistor, October 1966
• 3,243,669 - Surface Potential Controlled Semiconductor Device, March 1969
• Patent Pending - DCIV Methodology for Rapid Determination of Reliability of Transistors, with A. Neugroschel
• 4,343,962 - Oxide Charge Induced High Low Junction Emitter Solar Cell, with J. G. Fossum, S. C. Pao, F. A. Lindholm, and C.-T. Sah, 1982