SCOTT THOMPSON
Professor

 

Education:

PhD, ECE, University of Florida, 1992
MS, EE, University of Florida, 1987
BSEE, University of Florida, 1985

Contact Information:

Email: thompson@ece.ufl.edu
Phone: 352-846-0320
Office: 535 New Engineering Building
Homepage: www.thompson.ece.ufl.edu

Program Affiliation:

Area:  Devices, Electronics
Lab:   Software and Analysis of Advanced Material Processing Center

Fields of Interest:

• Solid state electronics and nano technology, new materials and devices to extend Moore's law, Electrical measurements and modeling of strained Si, Ge, GaN semiconductors.

Employment:

2008 - Professor, Electrical & Computer Engineering, University of Florida
2004 - Associate Professor, Electrical & Computer Engineering, University of Florida

Refereed Journals in the Last 3 Years:

2007
Y. Sun, S.E. Thompson, and T. Nishida, “Physics of strain effects in semiconductors and metaloxide- semiconductor field-effect transistors,” Journal of Applied Physics 101, 104503 2007, pg.1-22.

R. Arghavani, N. Derhacobian, V. Banthia, M. Balseanu, N. Ingle, H. M’Saad, S. Venkataraman, E. Yieh, Z. Yuan, L.-Q. Xia, Z. Krivokapic, U. Aghoram, K. MacWilliams, and S.E. Thompson, “Strain Engineering to Improve Data Retetntion Time in Nonvolatile Memory,” IEEE Transactions on Electron Devices Vol. 54, Issue 2, Feb 2007, pg. 362-365.

S. Suthram, J. C. Ziegert, T. Nishida, and S. E. Thompson, "Piezoresistance Coefficients of (100) Silicon nMOSFETs Measured at Low and High (~1.5 GPa) Channel Stress," IEEE Electron Device Letters, Vol. 28, NO. 1, January 2007

2006
Y. Sun, G. Sun, S. Parthasarathy, and S.E. Thompson, “Physics of Process Induced Uniaxially Strained Si,”, Materials Science & Engineering B, 135 (2006) pg. 179-183.

X. Yang, J. Lim, G. Sun, K. Wu, T. Nishida, and S. E. Thompson, "Strain-induced changes in the gate tunneling currents in p-channel metal-oxide-semiconductor field-effect transistors," Applied Physics Letters 88, 052108, 2006.

Scott E. Thompson, Senior Member, IEEE, Guangyu Sun, Youn Sung Choi, and Toshikazu Nishida, "Uniaxial-Process-Induced Strained-Si: Extending the CMOS Roadmap," IEEE Transactions on Electron Devices, Vol. 53, NO. 5, May 2006

Ji-Song Lim, Xiaodong Yang, Toshikazu Nishida, and Scott E. Thompson, "Measurement of conduction band deformation potential constants using gate direct tunneling current in n-type metal oxide semiconductor," Applied Physics Letters 89, 073509, 2006.

Scott E. Thompson and Srivatsan Parthasarathy, "Moore’s law: the future of Si microelectronics," Materials Today, Vol. 9, No. 6, June 2006

Contracts & Grants

• Office of Naval Research, MURI - Radiation Effects on Emerging Electronics Materials and Devices

Honors and Awards:

2006 - IEEE Fellow
2003 - Elected to Intel Fellow